Infineon is the market leader in highly efficient solutions for power generation, power supply and power consumption. The latest generation of Infineon’s MOSFET transistors were designed to ensure market leading performance, improve efficiency and to achieve better thermals in terms of the state of the art EMI behavior.
AC-DC applications requiring high-voltage blocking capability and fast switching with low losses take advantage of the revolutionary CoolMOS™ superjunction technology for more efficient power supplies. Infineon’s superjunction MOSFETs serve today's and especially tomorrow’s trends in different topologies, ranging from a simple flyback to TCM Totem Pole PFC. Designers benefit from a lower temperature, the improved form factor, and increased efficiency.
MOSFET – Dual, N-Channel, Small Signal 20 V, 540 mA Features. Low RDS(on) Improving System Efficiency. Low Threshold Voltage. Small Footprint 1.6 x 1.6 mm. ESD Protected Gate. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications. Load/Power Switches. Power Supply Converter Circuits.
Industrial power MOSFETs 12V-300V - OptiMOS™ and StrongIRFET™ families. Infineon’s highly innovative OptiMOS™ and StrongIRFET™ low and medium voltage power MOSFETs consistently meet the highest quality and performance demands in key specifications for power system design, such as on-state resistance and figure of merit characteristics. The OptiMOS™ power MOSFET portfolio. Dual N & P channel MOSFET Infineon offers a comprehensive portfolio in the SO8 package of automotive-qualified Dual N and P-channel devices for fast switching speeds addressing a wide variety of power requirements for automotive applications. AO4842 Symbol Min Typ Max Units BV DSS 30 V 0.004 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1.5 2.1 2.6 V ID(ON) 64 A 16.8 21 TJ=125°C 24 29 23.4 30 mΩ gFS 20 S VSD 0.75 1 V IS 2.4 A Ciss 373 448 pF Coss 67 pF Crss 41 pF Rg 1.8 2.8 Ω Qg(10V) 7.2 11 nC Qg(4.5V) 3.5 nC Qgs 1.3 nC Qgd 1.7 nC tD(on) 4.5 ns DYNAMIC PARAMETERS VGS =10V, V DS =15V, I D=7.7A Total Gate Charge Gate Drain Charge VGS.
Efficiently and reliably drive any power switch at any power level for any application.
Choose from our comprehensive portfolio of isolated, half-bridge and low-side gate drivers, which support IGBTs, GaNFETs, SiCFETs, to optimize your design. Our gate driver solutions, resources and expertise make it easier for you to design efficient, reliable and power dense systems.
Isolated drivers
Single and dual-channel isolated gate drivers that can be used in low-side, high-side or half-bridge configurations with isolation up to 5.7 kVrms.
Half-bridge drivers
Half-bridge gate drivers, also known as high-side-low-side drivers, support up to 700V and help reduce your switching losses.
Low-side drivers
Single and dual-channel low-side gate drivers with ultra-fast propagation delay and negative voltage handling.
GaN drivers
New levels of high speed, power density and efficiency.
IGBT & SiC drivers
Energy-efficient, robust and compact system designs.
Motor drivers
UCC21540
Reinforced isolation dual-channel gate driver with 3.3mm channel-to-channel spacing option
UCC21220A
4-A, 6-A, 3.0-kVRMS isolated dual-channel gate driver
UCC27282
120V half-bridge driver with cross conduction protection and low switching losses
Gate driver resources
Explore all of our gate driver training videos, ranging from gate driver basics to more specific and complex explanations.
N-channel Mosfet Circuit
See all of our gate driver reference designs, located in one place.
Colter wall imaginary appalachia flac. Receive fast and reliable technical support from our engineers throughout every step of your design.
See our top gate driver technical documents, including white papers, app notes, and more.
View our gate driver blogs written by our very own power engineers.
Search for any suppliers' gate drivers to find our similar devices.
P-channel Mosfet
Looking for other high-voltage solutions?
How To Use Dual N-channel Mosfet
You're in the right place. From GaN to controllers, we enable you to do more with less power with end-to-end power conversion devices that deliver high efficiency, power density, and reliability.